THE FACT ABOUT N TYPE GE THAT NO ONE IS SUGGESTING

≤ 0.15) is epitaxially grown on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, then the structure is cycled through oxidizing and annealing stages. Due to the preferential oxidation of Si around Ge [sixty eight], the initial Si1–Germanium was considered one of the elements whose existence was predicted in 1869 by Russia